HIGH-SPEED SCANNING FOR DEFECT MONITORING
This work is designated to the development of a tool for characterization
and test of semiconductor substrates and structures using a variety
of nondestructive laser scanning methods, including the Laser Beam
Induced Current (LBIC or Optical Beam Induced Current - OBIC), Scanning
Photoluminescence, method of the Scattered Light Collection and Infrared
Transmittance.
The property of the proposed design is that it allows fast characterization
of structures and wafers both at "macroscopic" i.e. the whole surface
of the wafer, and "microscopic" area i.e. a local area with dimensions
of 0.5 by 0.5 mm, with a capability to switch between these two
"characterization modes".
Proposed design combine a variety of characteristics that makes
it very flexible in terms of the laser type utilized, in terms of
signal (light) detection, as well as in terms of the functions to
be performed. E.g. the tool can be easily adopted for implementation
of a powerful-pulsed laser for local treatment on the surface of
the semiconductor structure or device.
AutoLISP language of AutoCAD has been used for interactive automatic
AutoCAD drawing design for a critical segment of the scanner. Optical
multiple reflections had been simulated to model the collection
of the scattered radiation by an elliptical mirror.
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