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HIGH-SPEED SCANNING FOR DEFECT MONITORING


This work is designated to the development of a tool for characterization and test of semiconductor substrates and structures using a variety of nondestructive laser scanning methods, including the Laser Beam Induced Current (LBIC or Optical Beam Induced Current - OBIC), Scanning Photoluminescence, method of the Scattered Light Collection and Infrared Transmittance.

The property of the proposed design is that it allows fast characterization of structures and wafers both at "macroscopic" i.e. the whole surface of the wafer, and "microscopic" area i.e. a local area with dimensions of 0.5 by 0.5 mm, with a capability to switch between these two "characterization modes".

Proposed design combine a variety of characteristics that makes it very flexible in terms of the laser type utilized, in terms of signal (light) detection, as well as in terms of the functions to be performed. E.g. the tool can be easily adopted for implementation of a powerful-pulsed laser for local treatment on the surface of the semiconductor structure or device.

AutoLISP language of AutoCAD has been used for interactive automatic AutoCAD drawing design for a critical segment of the scanner. Optical multiple reflections had been simulated to model the collection of the scattered radiation by an elliptical mirror.

Contact Webteam   March 2, 2007